| 摘要 |
PURPOSE:To reduce the size and to simplify a semiconductor device by containing a commutation diode in a conductivity modulation type MOSFET (IGBT). CONSTITUTION:A collector of an n<+> type diffused layer, a base 3 of a p-type diffused layer an emitter 4 of an n<+> type diffused layer, and a polysilicon insulating electrode 4 are provided on an n<-> type Si semiconductor substrate 1 to form a composite power device IGBT of monolithic structure. A plurality of p-type layers 6 are substantially formed in a monolithic structure between the collector 2 and the emitter 4. When a collector current of a normal operation is of positive voltage, the diode does not operate, while the diode operates at the time of abnormal operation. Accordingly, its configuration is simplified to reduce the size of the IGBT without necessity of externally connecting a commutation diode. |
