Integrated semiconductor circuit with decoupled D.C. wiring.

摘要

An integrated semiconductor circuit, in which the D.C. part of the wiring (5) only containing D.C. information lies on a part (2A) of the insulating layer (2) located on the surface which is considerably thinner than the parts (2B) of the insulating layer under wiring parts not forming part of the D.C. wiring. Preferably, for this purpose a substrate contact diffusion (4) connected to a reference potential is provided under the D.C. wiring parts. As a result, H.F. interference signals at the D.C. wiring are reduced so that noise and distortion are considerably reduced.