发明名称 |
Read only memory device with memory cells each storing one of three states |
摘要 |
A ROM device includes a plurality of memory cells each storing one of three states, a cell voltage generating circuit for providing a cell voltage corresponding to the state stored in a selected one of the memory cells, and a reference cell for providing a reference voltage which is substantially the same as the cell voltage provided by a memory cell storing an intermediate state of the three states. The ROM also includes a comparator circuit for generating a logical output signal based on the result of a comparison between the cell voltage and the reference voltage.
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申请公布号 |
US4809224(A) |
申请公布日期 |
1989.02.28 |
申请号 |
US19870082696 |
申请日期 |
1987.08.07 |
申请人 |
FUJITSU LIMITED |
发明人 |
SUZUKI, YASUO;SUZUKI, YASUAKI;HIRAO, HIROSHI |
分类号 |
G11C16/04;G11C11/56;(IPC1-7):G11C7/00;G11C11/40 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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