发明名称 Read only memory device with memory cells each storing one of three states
摘要 A ROM device includes a plurality of memory cells each storing one of three states, a cell voltage generating circuit for providing a cell voltage corresponding to the state stored in a selected one of the memory cells, and a reference cell for providing a reference voltage which is substantially the same as the cell voltage provided by a memory cell storing an intermediate state of the three states. The ROM also includes a comparator circuit for generating a logical output signal based on the result of a comparison between the cell voltage and the reference voltage.
申请公布号 US4809224(A) 申请公布日期 1989.02.28
申请号 US19870082696 申请日期 1987.08.07
申请人 FUJITSU LIMITED 发明人 SUZUKI, YASUO;SUZUKI, YASUAKI;HIRAO, HIROSHI
分类号 G11C16/04;G11C11/56;(IPC1-7):G11C7/00;G11C11/40 主分类号 G11C16/04
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