| 发明名称 |
DRY-ETCHING PROCESS |
| 摘要 |
In a dry etching process for patterning a substrate (2), an etching mask (4) consisting of a chemically deposited oxide, for example Al2O3, is used and the etching is carried out in a fluorine-containing plasma. By this means, etching selectivities of more than 100 are achieved for a substrate (2) of silicon. |
| 申请公布号 |
DE3567768(D1) |
申请公布日期 |
1989.02.23 |
| 申请号 |
DE19853567768 |
申请日期 |
1985.04.23 |
| 申请人 |
BBC BROWN BOVERI AG |
发明人 |
GOBRECHT, JENS, DR.;ROSSINELLI, MARCO, DR. |
| 分类号 |
C23F4/00;H01L21/3065;H01L21/308;H01L21/316;(IPC1-7):H01L21/308;H01L21/306 |
主分类号 |
C23F4/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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