| 摘要 |
PURPOSE:To obtain a photoelectric converter which has high sensitivity by forming the thickness of a depletion layer in the same degree as that of a semiconductor. CONSTITUTION:An n-type GaAs to become a body 2 is epitaxially grown on an i-type gallium arsenide (GaAs) substrate 1, and a source 3 and a drain 4 are formed. Platinum which is metal 6 for producing Schottky barrier in the GaAs is thinly deposited to pass a light, and a depletion layer 7 which is caused by the Schottky barrier is expanded substantially in the entire thickness direction of a semiconductor in the body 2 under the metal 6. When a voltage is applied to a source 3 and drain 4, a current cannot flow except the thin layer of the bottom of the body 2. When a light is emitted, the thickness of the depletion layer 7 is made thin, and large current is flowed. |
