| 摘要 |
A gas sensor comprising a heat resisting electric resistor of a noble metal, and a semiconductor of sintered metal oxide covering the resistor, characterized in that the semiconductor comprises a sintered piece formed of metal oxide powder having a specific electric resistance such that the ratio (Ro/ro) of a resistance (ro) of the resistor with respect to a composite resistance (Ro) of the resistor and the semiconductor of metal oxide in the ambient air is in a range defined by an inequality 0.3 < Ro/ro <0.98. The above semiconductor of metal oxide may have oxidation activity restrained by a compound of bismuth, phosphor, lead, titanium, silicon or aluminum, and/or may be coated with a prorous layer of silica, alumina or silica-alumina, and/or may contain a lanthanide oxide and a IVa group element oxide, and/or may be sintered by using super fine powder of tin oxide as a binder compound. |
