METHOD OF PRODUCING A SEMICONDUCTOR LAYER OF AMORPHOUS SILICON AND A DEVICE INCLUDING SUCH A LAYER

摘要

A method of producing an amorphous silicon layer, in which the layer is deposited on a substrate in a plasma atmosphere which contains at least hydrogen is improved by the presence of nitrogen in the plasma atmosphere. The deposition process may be by reactive sputtering or glow discharge. The ratio between the partial pressures of nitrogen and hydrogen in the plasma atmosphere may be in the range 1/1000 to 1/10. By this method, the transition of carriers can be enhanced, so that the photoelectric conversion efficiency can be raised even with a low applied electric field.