发明名称 ARRAY-TYPE SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To execute a monitoring operation without affecting a laser characteristic by a method wherein an array-type detector whose photodetecting face is faced with the upper face of a heat-sink substrate is installed in the vicinity of the end of one side of an array-type semiconductor laser. CONSTITUTION:An array-type semiconductor laser 2 and an array-type detector 3 via a spacer 4 are installed on a heat-sink substrate 1. The detector 3 is installed in such a way that its photodetecting face 6 is faced downward and that a gap is secured between the face and the substrate 1. One part of a beam radiated from the end of the laser 2 is absorbed by the photodetecting face 6; its remaining part is reflected by the lower face of the detector 3 situated above the substrate 1 ; accordingly, a laser output does not become unstable. In addition, because a laser electrode 5 is installed under the photodetecting face of the detector 3, a sufficient width can be secured. Accordingly, the laser output can be monitored without affecting a laser characteristic and independently.
申请公布号 JPS6449291(A) 申请公布日期 1989.02.23
申请号 JP19870206109 申请日期 1987.08.19
申请人 NEC CORP 发明人 YAMANAKA YUTAKA
分类号 H01S3/00;H01S3/06;H01S5/00;H01S5/022 主分类号 H01S3/00
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