| 摘要 |
PURPOSE:To form an amorphous silicon-carbide film at relatively low temp., by diluting a gaseous mixture of hexachlorodisilane gas and paraffin gas with inert gas or hydrogen gas and then bringing the resulting diluted gas into contact with a base material of a specific temp. CONSTITUTION:Hexachlorodisilane gas and paraffin gas are mixed in a practically stoichiometrical ratio or so that paraffin gas is slightly in excess. As the above paraffin gas, respective gases of methane, ethane, propane, liquefied petroleum, etc., are used. The above gaseous mixture is diluted to <=5vol.% with inert gas and/or hydrogen gas. Subsequently, the resulting diluted gas is brought into contact with a base material heated to 250-600 deg.C. By this method, the above gaseous mixture is thermally cracked, by which the amorphous silicon-carbide film having superior adhesive strength can be formed on the base material. |
