| 摘要 |
PURPOSE: To improve reliability in adhesion and bonding by mutually adhering an aluminum bonding pad doping copper and a metal wire doping copper. CONSTITUTION: For electric connection to a copper dope aluminum material for forming the bonding pad in a semiconductor device, the copper-doped metal wire is formed with concentration roughly in a range of 100ppm to 10000ppm, and this metal wire is electrically connected with the copper dope aluminum material. Thus, hardness of metalization can be improved and when the metal wire is bonded to the aluminum doped with copper, that bonding effect is enhanced. |
