| 摘要 |
PURPOSE:To enable a field-effect transistor having required characteristics to be manufactured in a reliable manner, by forming an oxynitride film in a gate insulating film before performing vapor growth of a semiconductor layer which is to provide a channel region after formation of the gate insulating film. CONSTITUTION:An oxynitride layer 15a having different etching properties from those of an oxide film 2 formed on the surface of a semiconductor substrate 1 on which a semiconductor layer is to be deposited by vapor growth is formed in a gate insulating film 15. When the oxide film 2 on the surface of the semiconductor substrate 1 is etched before depositing the semiconductor layer 6 by vapor growth, the gate insulating film 15 can be prevented from being etched thereby and hence any problem such as deterioration of characteristics can be avoided. Since the semiconductor layer 6 formed on the substrate 1 is thus allowed to have excellent crystallinity, it is possible to provide a field-effect transistor having uniform stability as required. |
