发明名称 SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To make a signal storing capacitor large in capacitance by a method wherein a laminated capacitor section where a first electrode film and a second electrode film are alternately arranged is provided onto a substrate with a transfer gate formed on it, the first electrode film is connected with a bit wire through the intermediary of the transfer gate, and a power voltage is impressed on the second electrode film. CONSTITUTION:A laminated capacitor section is provided in such a manner that first electrode films 304 and second electrode films 306 are alternately arranged interposing dielectric layers 308 between them on a substrate with a transfer gate formed on it. Next, a second electrode film 306a to be a plate electrode layer made of a high melting metal or the like is formed on a capacitor insulating film 308a. A capacitor insulating film 306b is successively laminated on the plate electrode layer 306a. Insulating sections 318a and 318b and 320a-320c are formed on depletion regions 312a-312c and 314a and 314b which are deposited on one end of each first electrode film 304 and the other end 12 of each second electrode film 306 on the former end through a selective etching. A charge storing layer connecting conductive film 324 and a plate electrode connecting conductive film 322 are formed on the exposed part of the other end of the first electrode films 304a-304c and the exposed part of one end of the second electrode films 306a and 306b respectively.
申请公布号 JPS6447067(A) 申请公布日期 1989.02.21
申请号 JP19870204816 申请日期 1987.08.18
申请人 OKI ELECTRIC IND CO LTD 发明人 UCHIYAMA AKIRA;OKABE YUTAKA
分类号 H01L27/10;H01L21/822;H01L21/8242;H01L27/04;H01L27/108 主分类号 H01L27/10
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