| 摘要 |
PURPOSE:To simplify manufacturing process and to enhance throughput by patternwise exposing the material to be treated to light, X-rays, ion beams, or electron beams and selectively graft copolymerizing the exposed parts under an atmosphere of 2 kinds of monomer vapors to deposit a graft copolymer film. CONSTITUTION:A resist 2 formed on a substrate 1 is patternwise exposed for example, with X-rays 4, and selectively graft copolymerized on the exposed parts 5 under the atmosphere of at least 2 kinds of the monomer vapors 6, 7 which can increase graft reactivity with the resist 2, thus permitting the graft copolymer film 8 in a form of a desired pattern to be sufficiently deposited with a small quantity of radiation for a short reaction time, and a single layer resist process to be adopted, and consequently, the resist process to be simplified and throughput to be enhanced. |
