| 发明名称 |
SEMICONDUCTOR DEVICES AND METHOD FOR MAKING THE SAME |
| 摘要 |
A semiconductor device has an active layer in which a semiconductor element is formed by employing a silicon single crystal as a substrate. The present invention causes a tensile strain to remain in the active layer, thereby to improve the carrier mobility. |
| 申请公布号 |
DE3378872(D1) |
申请公布日期 |
1989.02.09 |
| 申请号 |
DE19833378872 |
申请日期 |
1983.02.02 |
| 申请人 |
HITACHI, LTD. |
发明人 |
KOBAYASHI, YUTAKA;SUZUKI, TAKAYA |
| 分类号 |
H01L29/78;H01L21/268;H01L21/322;H01L21/324;H01L21/331;H01L29/04;H01L29/10;H01L29/167;H01L29/32;H01L29/73;H01L29/786 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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