| 摘要 |
PURPOSE:To make it possible to apply a resistive element to a GaAs IC process by forming the resistive element of a compound or mixture of a high-melting point metal and silicon and oxygen or both of them, thereby enabling the resistive element to be formed at a low temperature. CONSTITUTION:A resistive element is provided which composed of a compound or mixture of a high-melting point metal and silicon and oxygen or both of them. For instance, a resistive element 101 is a mixture of tungstem and silicon, which is partially compounded. One end of the resistive element 101 composed of a mixture is connected to a source-drain electrode 102, and other end is connected to a wiring metal 103. Since the resistive element 101 can be formed at a low temperature, it fits the resistive element of a GaAs IC. |
