| 摘要 |
PURPOSE:To obtain a receptor ensuring blocking action, by doping a photoconductive semiconductor layer with an impurity in the vicinity of the boundary of the semiconductor layer contacting an electrically blocking insulating layer interposed between an electric conductor and the semiconductor layer. CONSTITUTION:A film of an insulating material such as Si3N4, SiO2 or BN is deposited as a blocking layer on the surface of a metal as an electric conductor for a substrate, and an amorphous silicon layer with high resistance contg. carriers compensated sufficiently with boron or the like is formed on the insulating film. The amorphous silicon layer is doped with an impurity in the vicinity of the interface between the silicon layer and the blocking layer to increase the effect of hindering carriers from being injected from the metal of the substrate and to facilitate the outflow of carriers into the metal of the substrate. When the resulting receptor is negatively charged, an impurity for converting amorphous silicon into p type amorphous silicon is used in the formation of the amorphous silicon layer. When the receptor is positively charged, an impurity for converting amorphous silicon into n type amorphous silicon is used. |
