发明名称 MANUFACTURING PHOTOELECTRIC CONVERSION DEVICES
摘要 Photoelectric conversion devices are manufactured at high yield by repairing the devices during the final steps of the manufacuturing process. Short current paths resulting from the formation process of semiconductor layers can be eliminated by applying a reverse voltage to the layers, which thus are heated and made insulating. After the elimination of the short current paths, the reverse current no longer passes beyond 15 mA on a reverse voltage of 8 V.
申请公布号 AU580903(B2) 申请公布日期 1989.02.02
申请号 AU19870068050 申请日期 1987.01.28
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KUNIO SUZUKI;IPPEI KOBAYASHI;KATSUHIKO SHIBATA;MASATO SUSUKIDA;MIKIO KINKA;TAKESHI FUKADA;SUSUMU NAGAYAMA;MASAYOSHI ABE;SHUNPEI YAMAZAKI
分类号 H01L27/142;H01L31/20;(IPC1-7):H01L31/04;H01L31/18 主分类号 H01L27/142
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