| 摘要 |
PURPOSE:To realize a high-capacity element built of a dielectric material without reducing the degree of integration by a method wherein a titanium oxide film high in dielectric constant is used. CONSTITUTION:For example on a silicon substrate 1, an impurity diffusion layer 2 is formed, an insulating film 3 which is for example an oxide film is formed, patterning is accomplished by photolithography and etching, and then a titanium thin film 10 is formed by spattering. Next, the titanium thin film 10 is converted into a titanium oxide thin film 11, which is accomplished by thermal oxidation or lamp annealing or oxidizing ion implantation. A process follows wherein the titanium oxide thin film 11 is subjected to patterning, which is accomplished by photolithography or the like. Etching is accomplished for the formation of a capacitor, which is followed by the use of spattering or the like for the formation of an aluminum wiring for the completion of a semiconductor device of this design. |
