| 摘要 |
<p>PURPOSE:To obtain uniform thin film resistance body by a thick film system by coating a substrate with a metal organic solution containing ruthenium(Ru) and at least a kind of metal(M) selected from silicon(Si), barium(Ba), bismuth (Bi) and lead(Pb) and then firing the substrate. CONSTITUTION:As a resistance body material, a metal organic solution including ruthenium(Ru) and at least a kind of metal(M) selected from silicon(Si), barium(Ba), bismuth(Bi) and lead(Pb) in such a manner that the atomic number ratio (M/Ru) of metal(M) and ruthenium(Ru) becomes 0.5-2.5 is used. The substrate is coated with this solution and is then dried. Thereafter, the substrate is fired under the air having the peak temperature of 500 deg.C or higher to form a heat generating resistance body. The resistance body thus obtained includes ruthenium oxide (RuO2), an oxide of other metal and combined oxide of the other metal and ruthenium and is homogeneous. Thereby, a homodeneous and thin film resistance body can be obtained and it also assures less variation of resistance value by power and high reliability.</p> |
