| 摘要 |
PURPOSE:To form electrodes without damage of a semiconductor layer on the channel of a T-shaped thin film transistor by growing a protective metal film on a semiconductor layer, removing the protective metals of the source, drain electrodes, then patterning the impurity semiconductor layer, and forming the source, drain electrodes. CONSTITUTION:A gate electrode 2 is grown and patterned on an insulating substrate 1, a gate insulator layer 3 and a semiconductor layer 4 are grown, and a protective metal layer 5 is grown. Then, the layer 5 is patterned in a predetermined shape to form an impurity semiconductor layer 6. Further, the layer 6 is patterned in source, drain electrodes. In this case, the layer 6 of the channel of a thin film transistor is not etched due to the layer 5 previously patterned. |
