Field-effect controlled, bipolar power semiconductor component, and method for producing it

摘要

In a field-effect controlled, bipolar power semiconductor component of the IGR (Insulated Gate Rectifier) type, the latch-up problems associated with the parasitic thyristor elements are solved by limiting the periphery of the n-regions (5a...e) of the n-emitter layer (5) by means of low-resistance p<+> zones (9), on the one hand, and by arranging the gate electrodes (7) in trenches, on the other hand. A critical voltage drop of the lateral hole current in the p regions (4a, b, c) of the p base layer (4) is avoided in this way. <IMAGE>