发明名称 |
Method of connecting wirings through connection hole. |
摘要 |
<p>A method includes the steps of forming an insulating layer on a first conductive layer, forming a connection hole in the insulating layer, performing etching using an ion having a very low etching rate with respect to the first conductive layer and a high etching rate with respect to the insulating layer, thereby forming a taper on a side wall of the connection hole, and forming a second conductive layer on the first layer and the insulating layer. A typical example of an etching ion is an oxygen ion.</p> |
申请公布号 |
EP0300414(A1) |
申请公布日期 |
1989.01.25 |
申请号 |
EP19880111550 |
申请日期 |
1988.07.18 |
申请人 |
NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
发明人 |
HASHIMOTO, CHISATO;MACHIDA, KATSUYUKI;OIKAWA, HIDEO |
分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/31;H01L21/90 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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