| 摘要 |
PURPOSE:To manufacture a large area photosensor having sensitivity to a short wavelength light from a CdS/CdTe photovoltaic element by forming a dense CdTe film in minute contact with a semiconductor film by coating such semiconductor film other than CdS film formed by the sintering method with CdCl2. CONSTITUTION:A paste obtained by adding ethylcellulose as the tackifier to the solution, wherein 2-ethylhexane acid dindium and P-tin toluic acid are dissolved into the xylene, is screen-printed on a glass substrate 1 and it is then dried and baked to form an ITO film 2. On such a film 2, CdCl2 working as the flux of CdTe is highly concentrated at both interfaces with coating of CdC2, the CdTe-CdCl2 liquid phase is formed during the baking of CdTe, a dense CdTe film 3 is formed with vaporization of CdCl2 and a continuous ITO/CdTe hetero-junction is formed. Next, after ohmic electrodes 6, 7 are fitted to the film 2 and carbon film 5, the electrodes 6, 7 are fixed and a lead wire 8 is led out from the electrodes 6, 7. |
