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发明名称
Process for preferentially etching polycrystalline silicon
摘要
申请公布号
US4799991(A)
申请公布日期
1989.01.24
申请号
US19870115307
申请日期
1987.11.02
申请人
MOTOROLA, INC.
发明人
DOCKREY, JASPER W.
分类号
H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/302
主分类号
H01L21/302
代理机构
代理人
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地址
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