| 摘要 |
PURPOSE:To provide a thin film type superconductor having a superconductivity transfer temp. Tc in the same degree as ceramics and with improved stability by preparing the superconductor with a specific sintering as target by means of sputtering in mixture gas atmosphere in which fluoric compound gas is added to argon or argon plus oxygen gas. CONSTITUTION:As atmospheric gas for preparation of a superconductive film by sputtering process, a mixture of fluoric compound gas and Ar or Ar+O2 gas is used, and a film is formed by using a sintering of MBa2Cu3O7-delta (0<delta<1) as sputtering target, where M includes at least one of Y, Lu, Yb, Tm, Er, Ho, Dy, Gd, Sc. As the atmospheric gas for preparation of sputtering film of oxide, fluoric compound gas is added to Ar or Ar+O2 gas, and thereby part of the positions to be occupied by oxygen atoms in a crystal of oxide is substituted by F atoms to accomplish enhancement of Tc of the film and improvement of stability. This enhances Tc of the thin film type superconductor to a one near sintered substance, and the stability is also improved. |
