| 摘要 |
PURPOSE:To expose patterns adequately by giving maximum beam size allowable at every pattern regarding a drawing with high accuracy or a drawing with low accuracy in response to the size of the patterns and division-exposing the patterns. CONSTITUTION:The size of electron beams passing through a second rectangular hole 16 is varied by a variable adjusting deflector 15 from the rectangular electron beams of a mask 13 with a first rectangular hole 13a, and electron beams 21 are shot at a predetermined position on a sample 3 through a main polariscope 20. In such a variable rectangular electron beam exposure device, the variable adjusting deflector is given maximum beam size allowable at every pattern to be drawn on the basis of an exposure starter data and a rectangular size data while a data based on a division number data, a scanning pitch and the exposure starting position data is transmitted over the main polariscope 20, and the patterns on the sample 3 are exposed. |
