| 摘要 |
PURPOSE: To prevent holes which are formed as seeds by etching a first lateral epitaxial overgrowth(ELO) layer from being left in the final structure by filling up the holes with epitaxial silicon. CONSTITUTION: After performing a standard ELO process in the first stage, holes 22 which become first seeds are exposed by selectively etching a grown silicon layer 16. Then an oxide layer 12 is continuously formed by oxidizing a silicon substrate exposed in the holes 22. Moreover, the surface of a merged silicon layer 28 is substantially flattened by filling up the holes 22 of the silicon layer 16 by performing a second ELO process by using the first ELO as seed crystals. Finally, a real on-insulator silicon SOI structure is obtained by removing the remaining part of an oxide layer 18. |
