| 摘要 |
PURPOSE:To reduce leakage currents at the time of nonconduction by forming a pair of superconducting electrodes to a semiconductor substrate and selectively shaping a high impurity concentration layer between the superconducting electrodes through the implantation of impurity ions, using these superconducting electrodes as masks. CONSTITUTION:A high-resistance P<-> type Si substrate 11 is taper-etched from the rear, and an operating section is brought to thickness of approximately 1mum. Insulating films 15, 17 are shaped onto both surfaces of the substrate through thermal oxidation, and a control electrode 16 consisting of a polycrystalline silicon film is formed onto the rear according to a pattern. One part of the insulating film 17 on the surface is removed through etching, a perovskite type oxide superconductor film having a rare earth element is shaped, and the oxide superconductor film is formed according to a pattern, thus shaping a pair of superconducting electrodes 12, 13. Boron ions are implanted, employing the superconducting electrodes 12, 13 as masks. When all implanting impurity is activated through rapid-annealing, a high concentration P<+> type layer 14 is formed in a channel region between the superconducting electrodes 12, 13 through a self-alignment manner. Accordingly, leakage currents at the time of nonconduction can be reduced. |
