| 摘要 |
PURPOSE:To prevent the generation of a carrier attraction by incorporating 0.01-1.0% SiO2 into a carrier and consisting the balance of ferrite having a specific compsn. CONSTITUTION:This carrier contains 0.01-1.0wt.% SiO2 and consists of the balance the ferrite having the compsn. expressed by formula I. The saturation magnetization of the carrier is 30-80emu/g, the specific resistance 10<6>-10<10>OMEGA.cm and the apparent specific dielectric constant >=7. Namely, the Cu-Zn ferrite contg. SiO2 is calcined at 1,150-1,300 deg.C higher than 950-1,050 deg.C calcination temp. of ordinary Cu-Zn ferrite, by which a high resistance layer contg. the SiO2 at a high ratio is deposited at the grain boundaries to form electrical double layers. The apparent specific dielectric constant over the entire part is thereby increased and the carrier attraction of the ferrite carrier having the low specific resistance is prevented. |
