| 摘要 |
PURPOSE:To obtain a memory cell structure to be used for an alpha-ray resisting reinforced dynamic RAM by a method wherein a transistor is constituted by a transistor which can be operated in two directions, and a charge accumulation layer is provided on the surface of a semiconductor device. CONSTITUTION:The transistor 100 is a SICOS type bipolar transistor having the structure wherein a base electrode is picked out by a polycrystalline silicon film 12, and a charge accumulation layer 101, consisting of a polycrystalline silicon film 13, a silicon dioxide film 10 and an electrode 29, is provided directly above said transistor 100. Also, the emitter of the transistor 100 and the charge accumulation layer 101 are connected. As the charge accumulation layer 101 is formed directly above the transistor 100, elements can be formed in a highly integrated manner. Also, as the charge accumulation layer 101 is provided on the element surface, the information breakdown generated by the external noise of electrons, holes and the like caused by alpha-rays can be prevented. |
