发明名称 PATTERN FORMING PROCESS
摘要 PURPOSE:To improve solvent resistance of a pattern by using a specified photoreactive crosslinking resin compsn. CONSTITUTION:A photoreactive crosslinking resin compsn. consists of a polymer (e.g. polyvinyl cinnamate) having crosslinking functional groups and photoreactive functional groups, and a low molecular compd. (e.g. methyl cinnamate) which can cause photoreaction with the afore-mentioned polymer. After forming a thin film 1 from said compsn. on a substrate 2, the thin film is exposed through a photomask 3 to cause a reaction in the film 11 at the exposed part. Then, the low molecular compd. 111 at the unexposed part is removed under reduced pressure and/or by heating to cause decrease of its volume. The whole body of the film is crosslinked by exposing the whole surface of the film simultaneously or after decreasing the volume. Thus, a pattern 13 is formed. By this process, gratings or lenses having high solvent resistance are formed in large amt. inexpensively.
申请公布号 JPS649447(A) 申请公布日期 1989.01.12
申请号 JP19870165004 申请日期 1987.06.30
申请人 KURARAY CO LTD 发明人 KAWATSUKI YOSHIHIRO;UETSUKI MASAO;IGUCHI TSUTOMU;TAKAHASHI AKIJI;TOKUHARA TOSHIAKI;BABA KAZUO
分类号 G03C1/00;G02B5/18;G03C5/00;G03F7/00;G03F7/038;G03F7/26;G03F7/30;G03F7/38 主分类号 G03C1/00
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