| 摘要 |
PURPOSE:To increase the number of device chips, which can be provided from one sheet of a wafer, by blinding either region of a device pattern, which is formed on A reticle, or a wafer alignment mark region for direct drawing, of a charged beam, exposing only the pattern of the other region, and performing said operations in the predetermined sequence. CONSTITUTION:In an exposure sequence A, a wafer alignment mark 103 for direct drawing of a charge is blinded as shown by a shaded area. The blinding position is blinded by specifying the positions of a-a'-d-d' with the distances from the center of a reticle. Thus the outer parts from the center are blinded. Only a device pattern region 102 is exposed on a wafer 201 in the predetermined sequence by using the reticle 101, which is blinded in this way. In an exposure sequence B, the device pattern region 102 is blinded, and only the four water alignment marks 103 for direct drawing of the charged beam are exposed on the wafer 201 in the predetermined sequence. Thus the exposure can be performed at the desired positions of the wafer 201. |
