AN OHMIC CONTACT FOR AN INTERMETALLIC COMPOUND SEMICONDUCTOR AND A METHOD OF PROVIDING SUCH A CONTACT,申请号EP19850107128-传众专利搜索

发明名称	AN OHMIC CONTACT FOR AN INTERMETALLIC COMPOUND SEMICONDUCTOR AND A METHOD OF PROVIDING SUCH A CONTACT
摘要
申请公布号	EP0164720(B1)	申请公布日期	1989.01.11
申请号	EP19850107128	申请日期	1985.06.11
申请人	INTERNATIONAL BUSINESS MACHINES CORPORATION	发明人	JACKSON, THOMAS NELSON;KIRCHNER, PETER DANIEL;PETTIT, GEORGE DAVID;WOODALL, JERRY MACPHERSON
分类号	H01L29/41;H01L21/28;H01L21/285;H01L29/43;H01L29/45;(IPC1-7):H01L29/40	主分类号	H01L29/41
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