| 摘要 |
PURPOSE:To enlarge a rewriting speed, by etching an oxide film produced on a nitride film at a gate part used as a mask and then forming polycrystalline silicon. CONSTITUTION:After a thin oxide film 2 is produced on a semiconductor substrate 1, a nitriding film 3 is deposited. A resist 3a is used as a mask to etch the nitride film 3. After phosphorus implantation, the resist is removed and the whole surface is oxidized. Subsequently, the thin oxide film 10 on the nitride film 3 used as the mask is removed by an etching process. Polycrystalline silicon 5 is deposited on the whole surface, a resist 5a is used as a mask to etch the polycrystalline silicon 5, and the resist 5a is removed. Next the polycrystalline silicon 5 is used as a mask to etch the oxidizing film, and arsenic is implanted to form an N source/drain region. |
