| 摘要 |
PURPOSE:To reduce ill effect resulting from grain boundaries in a polycrystalline Si thin film by a method wherein a specified amount of hydrogen is caused to be absorbed in an active layer, composed of polycrystalline Si thin film, located between a source and drain electrodes in a co-planar type thin film transistor. CONSTITUTION:Hydrogen not less than 1% is introduced into an active layer of polycrystalline Si thin film located between a source and drain electrodes in a co-planer type thin film transistor using the polycrystalline Si thin film mounted on an insulating substrate. For the construction of such a thin film transistor (TFT), Si is deposited by evaporation upon a quartz substrate 21 and the polycrystalline Si thin film is processed for about an hour in H plasma for the formation of the polycrystalline Si thin film 22 containing hydrogen atoms 23. After this, a specimen is taken out of the furnace according to a prescribed procedure, which is followed by known processes necessary for the completion of the device. |
