发明名称 |
Process for epitaxial deposition of silicone. |
摘要 |
<p>The present invention relates to a high throughput single crystal epitaxial deposition process which achieves increased uniformity, both wafer to wafer and across the wafer surface. There is provided an epitaxial deposition process characterized by low-level cooling periods which minimize temperature changes between deposition cycles and inter-cycle cleaning so that each new wafer is presented with a substantially equivalent deposition environment.</p> |
申请公布号 |
EP0296804(A2) |
申请公布日期 |
1988.12.28 |
申请号 |
EP19880305650 |
申请日期 |
1988.06.21 |
申请人 |
ASM EPITAXY |
发明人 |
GOODWIN, DENNIS LEE;HAWKINS, MARK RICHARD;JOHNSON, WAYNE L.;OLSEN, AAGE;ROBINSON, MCDONALD |
分类号 |
C30B25/02;C30B25/10 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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