| 摘要 |
<p>This invention relates to a static random access memory (RAM) circuit, especially a static RAM circuit in which the data stored in a memory cell is readout by detecting a transit of address signal level. That is, an address transit pulse is generated by detecting an address signal transition, and the first and the second pulses are generated by detecting a start edge and an end edge of said address transit pulse respectively. The first pulse enables a selected word line for reading out the data stored in selected memory cells. The second pulse enables an data output circuit coupled to the bit lines for transferring said readout data to an output terminal. Under such construction, memory access operation becomes higher, and even if "skew" phenomenon is caused, the transient data readout from the memory cells instantaneously are prevented from transferring to the output terminal.</p> |
