An integrated circuit with a protection device utilizing one or more subsurface diodes and associated method of manufacture.

摘要

An integrated circuit with a protection device (12) created on a semiconductor body (24 and 26) utilizes one or more semiconductor diodes that have subsurface PN junctions (46) for preventing high-magnitude voltages, such as those generated by electrostatic discharge, from damaging sensitive electronic elements of a protected circuit component formed from part of the body. The device is fabricated by an epitaxial layer/double buried region process.