Method of manufacturing a semiconductor device having a trench isolation region, and device manufactured by this method.

摘要

The present invention provides a method of manufacturing a semiconductor having a trench region (25, 55). After an etching process for forming a trench region (25, 55) in a substrate (23, 53), the corners of the trench region are covered with a polycrystalline layer (27, 57). The structure is subjected to an oxidation treatment. As the polycrystalline layer covers the corners roundly, the corners are oxidized roundly. As a result, semiconductor islands (302, 502) having rounded corners are achieved.