| 摘要 |
PURPOSE:To obtain a laser high in reliability even though it is operated for a long period, preventing radiation laser from reaching to a re-growth interface by a method wherein impurity in a current block layer is made to be diffused into a clad layer just under the block layer. CONSTITUTION:A p-type AlGaAs first clad layer 2, a p-type AlGaAs active layer 3, an n<+>-type AlGaAs second clad layer 4, an n-type AlGaAs third clad layer 5, and a p<+>-type GaAs current block layer 6 are formed on a p-type GaAs substrate 1 and the block layer 6 is etched along the direction of a resonator for the formation of a stripe-like groove 13. Next, the substrate 1 is subjected to heat treatment so as to diffuse impurity in the block layer 6 into the third clad layer 5 for the formation of an n-type reverse layer 12. Next an n-type AlGaAs fourth clad layer 7, an n-type GaAs contact layer 8, and electrodes 9 and 10 are formed. The distance between the active layer 3 and the re-growth interface 11 is made to be longer through forming a reverse layer 12 so as to constrict the current, and thus the interface is protected against deterioration due to laser radiation reaching the interface.
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