| 摘要 |
PURPOSE:To realize a circuit which has a current-voltage characteristic of a sharp build-up to be operatable at high speed and to be of a micro logic amplitude, by providing a heterojunction of a strongly degenerated semiconductor with a thin blocking layer. CONSTITUTION:A heterogeneous semiconductor junction is provided which includes an N (or P)-type strongly degenerated first semiconductor 1-1, a blocking layer with a predetermined thickness which is mede of a second semiconductor being non- degenerate whose conduction band (or valence band) forms a continuous junction together with the conduction band (or valence band) of the semiconductor 1-1, and a third semiconductor 1-3 contacting with the blocking layer through a barrier with a predetermined potential height and being of a forbidden band width narrower than that of the semiconductor 1-2. For example, a diode comprises a heterogeneous semiconductor junction consisting of an N<+> type Al0.7Ga0.3As substrate 1-1, an undoped Al0.7 Ga0.3As layer 1-2 with a thickness of about 5-200nm whose conduction band forms a continuous junction together with the conduction band of the semiconductor 1-1, and an N<+> type GaAs layer 1-3 contacting with the layer 1-2 through a barrier with a predetermined potential height and being of a forbidden band width narrower than that of the Al0.7Ga0.3As.
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