| 摘要 |
PURPOSE:To improve the moisture resistance of a protective film for a semiconductor integrated circuit device, in which a bump is formed to a wiring through an opening shaped to the protective film, by composing the protective film of an insulating film for flattening the surface, an silicon nitride film formed onto the insulating film and an silicon oxide film shaped onto the silicon nitride film. CONSTITUTION:In a semiconductor integrated circuit device in which a bump 28 is shaped to a wiring 21 through an opening formed to a protective film 25, said protective film 25 is constituted of an insulating film 22 for flattening the surface, an silicon nitride film 25 shaped onto the insulating film, and an silicon oxide film 24 formed onto the silicon nitrite film 23. The insulating film 22 for flattening the surface is shaped onto the wiring 21 such as wirings 21a-21c for a bipolar LSI through the bias sputtering of SiO2, etc., and the silicon nitride film 23 such as the SiN film 23 is formed onto the insulating film 22 through plasma CVD. The silicon oxide film 24 such as the SiO film 24 is shaped onto the SiN film 23 through plasma CVD. Accordingly, the protective film 25 is formed, an opening 25a is shaped to the specified section of the protective film 25, and the solder bump 28 is formed through a Cr film 26, a Cu film 34 and an Au film 35.
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