| 摘要 |
PURPOSE:To increase the freedom in designing and manufacturing a titled device and to eliminate the trouble by the exfoliated matter, etc., from substrates as well as to improve the rate of film formation by enabling the disposition of ion sources and vapor sources in arbitrary directions. CONSTITUTION:The inside of a vacuum vessel 2 is evacuated to a prescribed vacuum degree and while a holder 28 is rotated, ions 14 of Ar, nitrogen, etc., are projected from the ion sources 12 to execute heating by ion bombardment. Evaporating particles 34 of Ti, etc., are thereafter deposited on the substrates 6 by utilizing the arc discharges in the vapor sources 30, in parallel with which the vapor deposition of the evaporating particles 34 onto the respective substrates 6 and the projection of the ions 14 thereto are alternately executed by projecting the ions 14 from the ion sources 12 to form the thin films on the substrates 6. The ion sources 12 and the vapor sources 30 can be disposed in arbitrary directions by this constitution. The need for disposing these sources below the substrates 6 is thereby eliminated and the trouble by the exfoliated matter, etc., from the substrates 6 is eliminated.
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