| 摘要 |
PURPOSE:To enable gettering without any bad influence upon a P-N junction part, by covering a semiconductor substrate on which the P-N junction is formed with an insulating film, and covering the part on the junction with an insulating film to prevent the the impurity diffusion when an electrode material corresponding to the P-N junction is arranged on the insulating film. CONSTITUTION:When a semiconductor substrate on which active elements such as transistors and diodes and passive elements are formed is covered with an SiO2 film 2, phosphorous ion being impurity is previously implanted in the film 2. A P-N junction part to constitute these elements is covered with an Si3N4 film 3 of 1000Angstrom thick through which ion can not penetrate, and a polycrystal Si film 4 turning into electrodes is stuck on the whole surface containing the film 3. When the P ion in the film 2 is diffused, and conductive properties are imparted to the film 4 to use it as an electrode, the P-N junction can be prevented from being damaged by the effect of the film 3.
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