PRODUCTION OF THIN FILM OF OXIDE MAGNETIC MATERIAL

摘要

PURPOSE:To lower a substrate temp. and to prevent cracking by charging elements which hardly combine with the essential component element of a crystalline film of an oxide magnetic material or the substitution element thereof and are hardly incorporable into said crystal into the above-mentioned crystalline film during formation thereof. CONSTITUTION:The crystalline film of the oxide magnetic material such as gamma-Fe2O3 is formed on the substrate by using a vacuum technique such as vacuum deposition method or sputtering method. The elements such as Bi and Pb which hardly produce a compd. with the essential component element of the above-mentioned oxide magnetic material or the substitution element of the essential component element and are relatively hardly incorporable into the above-mentioned oxide magnetic material crystal are charged to the above-mentioned film during the formation thereof in a process for producing the thin film of the above-mentioned oxide magnetic material. The elements to be charged can be charged by mixing the same into an evaporation source or sputtering target and the amt. of the elements to be charged is preferably about the elements to be charged : magnetic crystal = 0:1-1:1 by volume. The substrate temp. during the film formation is thereby lowered and the cost is reduced; in addition, the cracking is suppressed.