Semiconductor devices and a process for producing the same

摘要

Disclosed is an MOSIC including a plurality of silicon gate type MOSFET's in which, after the polycrystalline silicon wirings are formed simultaneously with polycrystalline silicon gates, electrodes contacted with the source and drain regions are made of polycrystalline silicon so as to be connected to the polycrystalline silicon wirings, thereby to prevent the shallow pn junctions of the source and drain regions from being destroyed by the contacts and to provide a high degree of integration to one silicon chip.