| 摘要 |
PURPOSE:To prevent a part affected by diffused layers from being formed by a method wherein an impurity gas in a conductivity type different from that of another impurity coming out of diffused layers is fed and then actually required amount of the impurity gas is fed. CONSTITUTION:P-type diffused layers 2 are selectively formed on a P-type silicon substrate 1 by specified process. Next, an N-type epitaxial layer 3 is formed on the substrate 1 but at this time, the flow rate of impurity gas added to an epitaxial device together with a growing gas is changed to be higher at the beginning but rapidly lowered proportionally to the growth of the epitaxial layer 3 until the specified N type epitaxial layer 3 is formed. Through these procedures, plenty of N-type impurity gas is fed to another impurity coming out of the P-type diffused layers 2 to prevent a part affected by the P-type diffused layers 2 from being formed by offsetting the N-type impurity gas against the impurity coming out of the P-type diffused layers 2.
|
