| 摘要 |
PURPOSE:To make it possible to obtain steps to reproduce the steps of a mark in a part, which is located on the mark, of a wiring film while filling of a contact hole with a wiring film material is completely executed by a method wherein a taper is formed on the contact hole and a sputtering is performed applying a DC bias. CONSTITUTION:A contact hole 2 and a mark 3 for mask alignment are formed by etching selectively an oxide film 4 and thereafter, the formation of a taper 4 is performed. After that, a wiring film 6 consisting of aluminum Al is formed by performing a sputtering which is executed by a DC bias method. According to such a way, a hole-filling to fill with the Al wiring film is executed sufficient ly to the hole 2 of 1mum or thereabouts and moreover, steps to reproduce the steps due to the mark are generated in the surface of the film 6 on the mark for mask alignment consisting of a plurality of stripes arranged at comparatively large intervals. Thereby, while the disconnection of the film 6 is prevented, the mark is reproduced by the steps of the surface of the film 6 and can be used as a reference for mask alignment.
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