| 摘要 |
PURPOSE:To improve reliability by a method wherein an insulating film, where the highest voltage is applied and all the trap is charged up, such as an oxide film or the like is used as an interlaminar insulating film between a floating-gate electrode, a control gate and a selection gate. CONSTITUTION:A control gate electrode 7 is provided on an interlaminar insulating film 6 and the potential of a floating-gate 5 is controlled through the capacitance coupling. The interlaminar insulating film 6, which is applied with a bias once, is formed in such a manner that the voltage highest within the extent of voltage which does not break down the interlaminar insulating film 6, is applied to the control gate electrode 7 for tens of msec to a few seconds as a p-type conductor substrate 1, a source region 2, and a drain region 3 are kept at a ground level after the control gate electrode 7, other electrodes, and others are wired. Therefore, the insulating film 6 is improved in an insulating property and the ratio of ions once injected into the stray gate electrode 5 to those volatiled through the interlaminar insulating film 6 can be reduced. By these processes, the semiconductor nonvolatile memory can be improved in reliability.
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