发明名称 MULTILAYER INTERCONNECTION OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To increase the number of layers to be stacked up by a method wherein the wirings respectively of two layers are arranged parallel with each other through the intermediary of an interlayer insulating film and the wirings of one layer is allowed to be positioned between the wirings of the other layer. CONSTITUTION:Lower wirings 10 which are the wirings belonging to a layer number (2m-1) are formed and, thereon, an interlayer insulating film 12 is formed. Next, in the recesses present in the surface of the interlayer insulating film 12, wirings 14 belonging to a layer number 2m are formed, buried in the recesses. The surface is covered by an insulating film 16, when wiring groups 18 involving two wiring layers are formed, oriented parallel with each other. Combination is so made that the wiring groups 18 and a wiring layer 20 cross each other in terms of the direction of wires. This design realizes a flattened multilayer interconnection which is composed of three layers or more.
申请公布号 JPS63311743(A) 申请公布日期 1988.12.20
申请号 JP19870147400 申请日期 1987.06.13
申请人 RICOH CO LTD 发明人 YOSHIYAMA YASUSHI;MUKAI TAKAO;NAKATANI MASAHIRO
分类号 H01L21/3205 主分类号 H01L21/3205
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